37. savetovanje CIGRE Srbija (2025) SIGURNOST, STABILNOST, POUZDANOST I RESILIENCE ELEKTROENERGETSKOG SISTEMA MULTISEKTORSKO POVEZIVANJE U ENERGETICI I PRIVREDI – B4-05
AUTOR(I) / AUTHOR(S): Miroslav Popović, Nikola Mirković, Aleksandar Milić
DOI: 10.46793/CIGRE37.B4.05
SAŽETAK / ABSTRACT:
Transistors based on modern wide-bandgap semiconductors, such as Gallium Nitride (GaN), are increasingly used in power electronics devices. Due to their specific structure and ability to rapidly switch states, standard calculations used for determining losses in silicon transistors are not applicable in this case. Therefore, an analytical model has been developed to estimate losses in GaN transistors in a half-bridge configuration, relying on data from technical documentation. The model considers different types of switching, including hard, soft, and semi-soft switching. A comparison of losses during soft and hard switching of transistors in a synchronous buck converter under the same operating conditions has been conducted. Based on the proposed model, optimal dead-time values have been determined to minimize transistor conduction during this period. Finally, the proposed model has been verified through the design of a 1 kW buck converter.
KLJUČNE REČI / KEYWORDS:
GaN transistors, synchronous buck converter, loss model
PROJEKAT / ACKNOWLEDGEMENT:
LITERATURA / REFERENCES:
- Alex Lidow, Michael de Rooij, John Glaser, “GaN Power Devices for Efficient Power Conversion”, četvrto izdanje knjige
- D. Christen and J. Biela, „Analytical Switching Loss Modeling Based on Datasheet Parameters for mosfets in a Half-Bridge,“ in IEEE Transactions on Power Electronics, vol. 34, no. 4, pp. 3700-3710, April 2019, doi: 10.1109/TPEL.2018.2851068.
- Zhiyuan Qi et al., „An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization,“ in IEEE Transactions on Power Electronics, vol. 36, no. 7, pp. 7942-7955, July 2021, doi: 10.1109/TPEL.2020.3044083.
- H. Qin, X. Zheng, Z. Zhu and C. Gong, „Analytical Power Loss Model for GaN Transistors Based on Temperature and Parasitic Parameters,“ 2024 7th International Conference on Electrical Engineering and Green Energy (CEEGE), Los Angeles, CA, USA, 2024, pp. 119-124, doi: 10.1109/CEEGE62093.2024.10744178.